s m d ty p e i c s m d ty p e t r a n s i s t o r s features pnp and npn transis tors have c om m on em itt ers. mo unting c ost and area c an be cut in half . absolute maxim um ratings t a = 25 tr1 tr2 collector-ba se voltage v cbo -60 60 v collector-emit ter voltage v ceo -50 50 v em itt er-b ase voltage v ebo -6 7 v collector current i c -150 150 m a pow er dissi pation(to tal) p d m w oper ating and storage and tem pera ture rang e t j , t stg paramet er sym bol rating unit 300 -55 to +150 1 23 4 5 unit: mm r 1 tr 1 tr 2 (4) (5) (1) (2) (3) sales@twtysemi.com 1 of 5 http://www.twtysemi.com s m d ty p e i c s m d ty p e t r a n s i s t o r s fm y1 a product specification 4008-318-123
2 of 5 s m d ty p e i c s m d ty p e t r a n s i s t o r s el ectrical characteristics t a = 2 5 parameter sym bol test c onditions min typ ma x unit collector-base breakdow n voltage v (br)cbo i c = -50 a , i e = 0 -60 v collector-em itt er breakdow n voltage v (br)ceo i c = -1 m a, i b = 0 -50 v em itt er- base b reakdow n voltage v (br)ebo i c = -50 a , i c = 0 -6 v collector cutof f c urr ent i cbo v cb =-60 v, i e =0 -100 na em itt er cutoff c urr ent i ebo v eb =-6v, i c =0 -100 na dc curre nt gain h fe v ce =-6v, i c = -1m a 120 560 collect or- em itt er saturation voltage * v ce(sat) i c = -50 m a; i b = -5 m a -0.5 v transition frequen cy f t i c = -2 m a; v ce = -12 v; f = 100 m hz 140 mh z collector output capacit ance c ob v cb =-12 v, i e =0a, f =1m hz 5 pf collector-base breakdow n voltage v (br)cbo i c = 50 a, i e = 0 60 v collector-em itt er breakdow n voltage v (br)ceo i c = 1 m a, i b = 0 50 v em itt er- base b reakdow n voltage v (br)ebo i c = 50 a, i c = 0 7 v collector cutof f c urr ent i cbo v cb =60v, i e =0 100 na em itt er cutoff c urr ent i ebo v eb =7v, i c =0 100 na dc curre nt gain h fe v ce =6v, i c = 1m a 120 560 collect or- em itt er saturation voltage * v ce(sat) i c = 50 m a; i b = 5 m a 0.4 v transition frequen cy f t i c = 2 m a; v ce = 12 v; f = 100 m hz 180 mh z collector output capacit ance c ob v cb =12v, i e =0a, f =1m hz 3.5 pf * pulse t est: puls e w idth 300s, duty cy cle 2.0%. transistor tr1(pnp) transistor tr2(npn) mark ing mar king y1 sales@twtysemi.com http://www.twtysemi.com s m d ty p e i c s m d ty p e t r a n s i s t o r s fm y1 a product specification 4008-318-123
s m d ty p e i c s m d ty p e t r a n s i s t o r s t y pical ch aracteristics tr 1 (pnp) ? 0.2 collector current : ic ( ma) ? 50 ? 20 ? 10 ? 5 ? 2 ? 1 ? 0.5 ? 0.2 ? 0.1 ? 0.4 ? 0.6 ? 0.8 ? 1.0 ? 1.2 ? 1.4 ? 1.6 v ce = ? 6v base to emitter voltage : v be (v) ta=100?c 25?c ? 40?c fig.1 grounded emitter propagation characteristics ? 0.4 ? 4 ? 8 ? 1.2 0 ? 2 ? 6 ? 10 ? 0.8 ? 1.6 ? 2.0 ? 3.5 a ? 7.0 ? 10.5 ? 14.0 ? 17.5 ? 21.0 ? 24.5 ? 28.0 ? 31.5 i b =0 ta=25 ? c ? 35.0 collector current : i c (ma) collector to emitter voltage : v ce (v) fig.2 grounded emitter output characteristics ( 1 ) ? 40 ? 80 ? 5 ? 3 ? 4 ? 2 ? 1 ? 20 ? 60 ? 100 0 i b =0 ta=25 ? c ? 50 a ? 100 ? 150 ? 200 ? 250 ? 500 ? 450 ? 400 ? 350 ? 300 collector current : i c (ma) collector to emitter voltage : v ce (v) fig.3 grounded emitter output characteristics ( 2 ) dc current gain : h fe collector current : i c (ma) fig.4 dc current gain vs. collector current ( 1 ) 500 200 100 50 ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 ta=25 ? c v ce = ? 5v ? 3v ? 1v 500 200 100 50 ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 v ce = ? 6v ta=100 ? c ? 40 ? c 25 ? c dc current gain : h fe collector current : i c (ma) fig.5 dc current gain vs. collector current ( 2 ) ? 0.1 ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 ? 1 ? 0.5 ? 0.2 ? 0.05 ta=25 ? c i c /i b =50 20 10 collector current : i c (ma) collector saturation voltage : v ce (sat) ( v) fig.6 collector-emitter saturation voltage vs. collector current ( 1 ) ? 0.1 ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 ? 1 ? 0.5 ? 0.2 ? 0.05 l c /l b =10 ta=100 ? c 25 ? c ? 40 ? c collector saturation voltage : v ce (sat) (v) collector current : i c (ma) fig.7 collector-emitter saturation voltage vs. collector current ( 2 ) 50 100 0.5 20 50 100 200 500 1000 12 510 ta=25 ? c v ce = ? 12v emitter current : i e (ma) transition frequency : f t (mhz) fig.8 gain bandwidth product vs. emitter current -0.5 -20 2 5 10 -1 -2 -5 -10 20 cib cob collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob (pf) emitter input capacitance : cib (pf) fig.9 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage ta=25 ? c f = 1mhz i e =0a i c =0a sales@twtysemi.com 3 of 5 http://www.twtysemi.com s m d ty p e i c s m d ty p e t r a n s i s t o r s fm y1 a product specification 4008-318-123
s m d ty p e i c s m d ty p e t r a n s i s t o r s t y pical ch aracteristics tr 2 (npn) 0 0.1 0.2 0.5 2 20 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 5 10 ta=100 ? c v ce = 6v 25 ? c ? 55 ? c collector current : i c ( ma) base to emitter voltage : v be (v) fig.10 grounded emitter propagation characteristics 0 20 40 60 80 100 0.4 0.8 1.2 1.6 2.0 0 0.05ma 0.10ma 0.15ma 0.25ma 0.30ma 0.35ma 0.20ma ta=25 ? c i b =0a 0.40ma 0.50ma 0.45ma collector current : i c (ma) collector to emitter voltage : v ce (v) fig.11 grounded emitter output characteristics ( 1 ) 0 0 2 8 10 4 8 12 16 4 6 20 i b =0a ta=25 ? c 3 a 6 a 9 a 12 a 15 a 18 a 21 a 24 a 27 a 30 a collector current : i c (ma) collector to emitter voltage : v ce (v) fig.12 grounded emitter output characteristics ( 2 ) 0.2 20 10 0.5 1 2 5 10 20 50 100 200 50 100 200 500 v ce =5v 3v 1v ta=25 ? c dc current gain : h fe collector current : i c (ma) fig.13 dc current gain vs. collector current ( 1 ) 0.2 0.5 1 2 5 10 20 50 100 200 20 10 50 100 200 500 25 ? c ? 55 ? c ta=100 ? c v ce =5v dc current gain : h fe collector current : i c (ma) fig.14 dc current gain vs. collector current ( 2 ) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 i c /i b =50 20 10 ta=25 ? c collector saturation voltage : v ce (sat) (v) collector current : i c (ma) fig.15 collector-emitter saturation voltage vs. collector current ( 1 ) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 i c /i b =10 ta=100 ? c 25 ? c ? 55 ? c collector saturation voltage : v ce (sat) (v) collector current : i c (ma) fig.16 collector-emitter saturation voltage vs. collector current ( 2 ) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 i c /i b =50 ta=100 ? c 25 ? c ? 55 ? c collector saturation voltage : v ce (sat) (v) collector current : i c (ma) fig.17 collector-emitter saturation voltage vs. collector current ( 3 ) 50 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 100 200 500 ta=25 ? c v ce =6v emitter current : i e (ma) transition frequency : f t (mhz) fig.18 gain bandwidth product vs. emitter current sales@twtysemi.com 4 of 5 http://www.twtysemi.com s m d ty p e i c s m d ty p e t r a n s i s t o r s fm y1 a product specification 4008-318-123
s m d ty p e i c s m d ty p e t r a n s i s t o r s t y pical ch aracteristics fm y1 a 0.2 0.5 1 2 5 10 20 50 1 2 5 10 20 cib cob collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob (pf) emitter input capacitance : cib (pf) fig.19 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage ta=25 ? c f = 1mhz i e =0a i c =0a ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 10 20 50 100 200 emitter current : i e (ma) fig.20 base-collector time constant vs. emitter current base collector time constant : cc r bb' (ps) ta=25 ? c f=32mh z v cb =6v sales@twtysemi.com 5 of 5 http://www.twtysemi.com product specification 4008-318-123
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